蓝宝石基氮化镓功率器件外延片

JGETLBX-L4/6

  • 4-inch and 6-inch available
  • Buffer breakdown voltage > 650V
  • Edge cracks < 3mm
  • Customized AlGaN and pGaN layer
  • In-situ Si3N4 or GaN cap layer can be choose
  • High repeatability and good uniformity
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ParameterSPECMeasurement technique/tool/conditionsComments
Substrate
Thickness (um)1000Micrometer　
Flat length (mm)47.5/　
Bevel designC-M 0.2°/　
Wafer bow≤20 umStress Mapper　
Epi
EPI total thickness (um)2~2.5PLBase on request
Finished 650V EPI wafer bow (6inch) in um≤±35Stress Mapper　
EPI surface rms roughness (AFM, indicate scan size in um2)≤1 nm in 5×5 um2AFM　
Capping layer thickness (nm)/TEMGaN cap ：3nm
SiN cap：3~100nm
pGaN layer thickness (nm)100±10TEMBase on request
Mg chemical concentration (at/cm3) PCOR-SIMS3E+19PCOR-SIMSE-mode
Mg/H  in pGaN(a.u.)  PCOR-SIMS>=2PCOR-SIMSE-mode
AlGaN barrier Al percentage0.18PLBase on request
AlGaN barrier thickness (nm)15TEMBase on request
AlN spacer thickness (nm)0.5/Base on request
GaN FWHM (102)＜500 arcsecXRD　
GaN FWHM (002)＜400 arcsecXRD　

JGDTLBX-L4/6

  • 4-inch and 6-inch available
  • Buffer breakdown voltage > 650V
  • Edge cracks < 3mm
  • Customized AlGaN layer
  • In-situ Si3N4 or GaN cap layer can be choose
  • High repeatability and good uniformity
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ParameterSPECMeasurement technique/tool/conditionsComments
Substrate
Thickness (um)1000Micrometer　
Flat length (mm)47.5/　
Bevel designC-M 0.2°/　
Wafer bow≤20 umStress Mapper　
Epi
EPI total thickness (um)2~2.5PLBase on request
Finished 650V EPI wafer bow (6inch) in um≤±35Stress Mapper　
EPI surface rms roughness (AFM, indicate scan size in um2)≤1 nm in 5×5 um2AFM　
Capping layer thickness (nm)/TEMGaN cap ：3nm
SiN cap：3~100nm
pGaN layer thickness (nm)100±10TEMBase on request
Mg chemical concentration (at/cm3) PCOR-SIMS3E+19PCOR-SIMSE-mode
Mg/H  in pGaN(a.u.)  PCOR-SIMS>=2PCOR-SIMSE-mode
AlGaN barrier Al percentage0.25PLBase on request
AlGaN barrier thickness (nm)25TEMBase on request
AlN spacer thickness (nm)1/Base on request
GaN FWHM (102)＜500 arcsecXRD　
GaN FWHM (002)＜400 arcsecXRD　

JGXTVBX-L4/6

  • 4-inch and 6-inch available
  • Buffer breakdown voltage > 750V（based on request）
  • Edge cracks < 3mm
  • Customized GaN growth layer thickness
  • Low warpage and high repeatability
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ParameterSPECMeasurement technique/tool/conditionsComments
Substrate
Thickness (um)1000Micrometer　
Flat length (mm)47.5/　
Bevel designC-M 0.2°/　
Wafer bow≤10 umStress Mapper　
Epi
EPI total thickness (um)>14PLBase on request
Finished 1200V EPI wafer bow (6inch) in um≤±35Stress Mapper　
EPI surface rms roughness (AFM, indicate scan size in um2)≤0.5 nm in 5×5 um2AFM　
n-GaN(1)_Si chemical concentration (at/cm3) PCOR-SIMS5E+18PCOR-SIMSBase on request
n-GaN(2)_Si chemical concentration (at/cm3) PCOR-SIMS2~3E+16PCOR-SIMSBase on request
Mg chemical concentration (at/cm3) PCOR-SIMS1E+19PCOR-SIMSBase on request
Mg/H  in pGaN(a.u.)  PCOR-SIMS>=2PCOR-SIMS 
GaN FWHM (102)＜400 arcsecXRD　
GaN FWHM (002)＜300 arcsecXRD