镓谷半导体650V E-mode 硅基氮化镓外延量产

2023年7月8日–福州镓谷 650V E-Mode 硅基氮化镓外延片正式通过终端客户验证,标志着其产品及工艺正式量产。最终产品可以用于手机快充、电源等领域。

Chargers on Table

镓谷利用其独有的专利技术,通过与多家客户共同打磨技术平台,完成了产品设计、开发、验证及量产。充分理解客户及终端市场需求,以优异的性能指标、优秀的一致性得到了客户的认可。为客户的设计提供低成本、高可靠性原材料。

主要的产品特性如下:

ParameterSPECMeasurement technique/tool/conditionsComments
Substrate
Thickness (um)1000Micrometer 
Flat lengh (mm)47.5/ 
Dopant/typeB/P-type/ 
Resistivity (ohm.cm)0.005-0.02Ω/ 
Bevel design <111> to <110>0.25°/ 
Wafer bow≤20 umStress Mapper 
Epi
EPI total thickness (um)4-5PLBase on request
Finished 650V EPI wafer bow (6inch) in um≤±35Stress Mapper 
EPI surface rms roughness (AFM, indicate scan size in um2)≤1 nm in 5×5 um2AFM 
Capping layer thickness (nm)/TEMGaN cap :3nm
SiN cap:3~100nm
AlN interlayer(nm)1.2TEMBase on request
AlGaN barrier Al percentage0.18PLBase on request
AlGaN barrier thickness (nm)20TEMBase on request
GaN channel thickness (nm)200TEMBase on request
GaN FWHM (102)<1800 arcsecXRD 
GaN FWHM (002)<1000 arcsecXRD 
C concentration in (Al)GaN layer below GaN-UID (at/cm3)- PCOR-SIMS3E+19SIMS 
Electrical Property
2DEG Sheet resistance (Ω/sq)367  
2DEG Carrier density (/ cm-2)9.20E+12  
2DEG Electron Mobility (cm2/Vs)1897