JGETLBX-S6/8
- 6-inch and 8-inch available
- Buffer breakdown voltage > 650V
- Edge cracks < 3mm
- Customized AlGaN and pGaN layer
- In-situ SiN or GaN cap layer can be choose
- High repeatability and good uniformity
| Parameter | SPEC | Measurement technique/tool/conditions | Comments |
| Substrate | |||
| Thickness (um) | 1000 | Micrometer | |
| Flat lengh (mm) | 47.5 | / | |
| Dopant/type | B/P-type | / | |
| Resistivity (ohm.cm) | 0.005-0.02Ω | / | |
| Bevel design | <111> to <110>0.25° | / | |
| Wafer bow | ≤20 um | Stress Mapper | |
| Epi | |||
| EPI total thickness (um) | 4-5 | PL | Base on request |
| Finished 650V EPI wafer bow (6inch) in um | ≤±35 | Stress Mapper | |
| EPI surface rms roughness (AFM, indicate scan size in um2) | ≤1 nm in 5×5 um2 | AFM | |
| Capping layer thickness (nm) | / | TEM | GaN cap ：3nm SiN cap：3~100nm |
| pGaN layer thickness (nm) | 100±10 | TEM | Base on request |
| Mg chemical concentration (at/cm3) PCOR-SIMS | 3E+19 | PCOR-SIMS | E-mode |
| Mg/H in pGaN(a.u.) PCOR-SIMS | >=2 | PCOR-SIMS | E-mode |
| AlGaN barrier Al percentage | 0.18 | PL | Base on request |
| AlGaN barrier thickness (nm) | 15 | TEM | Base on request |
| GaN channel thickness (nm) | 200 | TEM | Base on request |
| GaN FWHM (102) | ＜1800 arcsec | XRD | |
| GaN FWHM (002) | ＜1000 arcsec | XRD | |
| C concentration in (Al)GaN layer below GaN-UID (at/cm3)- PCOR-SIMS | 3E+19 | SIMS | |
JGDTLBX-S6/8
- 6-inch and 8-inch available
- Buffer breakdown voltage > 650V
- Edge cracks < 3mm
- Customized AlGaN layer
- In-situ SiN or GaN cap layer can be choose
- High repeatability and good uniformity
| Parameter | SPEC | Measurement technique/tool/conditions | Comments |
| Substrate | |||
| Thickness (um) | 1000 | Micrometer | |
| Flat lengh (mm) | 47.5 | / | |
| Dopant/type | B/P-type | / | |
| Resistivity (ohm.cm) | 0.005-0.02Ω | / | |
| Bevel design | <111> to <110>0.25° | / | |
| Wafer bow | ≤20 um | Stress Mapper | |
| Epi | |||
| EPI total thickness (um) | 4-5 | PL | Base on request |
| Finished 650V EPI wafer bow (6inch) in um | ≤±35 | Stress Mapper | |
| EPI surface rms roughness (AFM, indicate scan size in um2) | ≤1 nm in 5×5 um2 | AFM | |
| Capping layer thickness (nm) | / | TEM | GaN cap ：3nm SiN cap：3~100nm |
| AlN interlayer(nm) | 1.2 | TEM | Base on request |
| AlGaN barrier Al percentage | 0.18 | PL | Base on request |
| AlGaN barrier thickness (nm) | 20 | TEM | Base on request |
| GaN channel thickness (nm) | 200 | TEM | Base on request |
| GaN FWHM (102) | ＜1800 arcsec | XRD | |
| GaN FWHM (002) | ＜1000 arcsec | XRD | |
| C concentration in (Al)GaN layer below GaN-UID (at/cm3)- PCOR-SIMS | 3E+19 | SIMS | |
| Electrical Property | |||
| 2DEG Sheet resistance (Ω/sq) | 367 | ||
| 2DEG Carrier density (/ cm-2) | 9.20E+12 | ||
| 2DEG Electron Mobility (cm2/Vs) | 1897 | ||